Abstract: To address the problem of high power consumption and poor accuracy of traditional voltage reference, a full complementary metal-oxide-semiconductor (CMOS) voltage reference without resistors and bipolar transistors based on high-order curvature compensation technology is proposed in this paper. The N metal-oxide-semiconductor (NMOS) transistors with different threshold voltages operating in the subthreshold region are utilized to construct a stack structure, which generates the nano-ampere biased current and the complementary proportional to absolute temperature (CTAT) voltage. The proportional to absolute temperature (PTAT) voltage is produced by the positive channel metal oxide semiconductor differential pairs to compensate for the first-order curvature of the CTAT voltage. Meanwhile, By utilizing NMOS operating in the cutoff region to generate leakage currents that vary exponentially with temperature, high-order curvature compensation is performed to further improve the accuracy of the voltage reference and expand the temperature range of circuit operation. The circuit is designed in TSMC N12 nm CMOS process. The simulation results show that the designed voltage reference can operate at a power supply voltage of 0.45 V~1.20 V and output an average reference voltage of 234.5 mV. When the power supply voltage is 0.45 V and the temperature range is -40 ℃~125 ℃, the temperature coefficient of the voltage reference is 5.7 ppm/℃; the power consumption at room temperature is 3.7 nW, and the power supply rejection ratio is -59.7 dB at a frequency of 1 kHz.