一种基于HTCC工艺的高集成度微波前端系统级封装模块

    A High Integrated Microwave Front-end System-in-package Module Based on HTCC Process

    • 摘要: 针对微波前端功能密度提升需求,文中设计了一种基于高温共烧陶瓷(HTCC)多腔堆叠集成结构的小型化前端系统级封装SiP模块,实现了收发变频、本振产生、发射放大与调制、中频放大等功能的一体化高密度集成。在各腔中通过植入球栅阵列(BGA)实现HTCC基板的垂直堆叠,有效提升了集成密度,整体尺寸仅为45 mm×45 mm×10 mm。通过研究多级过渡垂直互连结构与模块内电磁耦合特性,实现了射频信号的低损耗互连传输与内部敏感单元间的高电磁隔离,同时热力有限元仿真结果表明该集成形式具备良好的散热与抗机械振动能力。通过试制获得该SiP样机,实测发射功率大于47.7 dBm,接收噪声系数小于3.5 dB,接收链路增益大于85 dB。该技术为微波前端的高密度、高可靠一体集成提供了一条技术途径。

       

      Abstract: In order to improve the functional density of microwave front-end, a miniaturized system-in-package (SiP) module based on a multi-cavity stacking integration structure is designed using high-temperature co-fired ceramic (HTCC) technology, which realizes the high-density integration of transmit/receive frequency conversion, local oscillator generation, transmit amplification and modulation, IF amplification and other functions. The vertical stacking of HTCC substrates is realized by implanting ball grid array (BGA) in each cavity, which effectively improves the integration density, and the overall size is only 45 mm×45 mm×10 mm. By investigating the vertical interconnection structure of multistage transition and electromagnetic coupling characteristics in the module, the low-loss interconnection transmission of RF signals and high electromagnetic isolation between internal sensitive units are achieved. At the same time, the finite element simulation results of thermal and mechanical stress indicate that the integrated approach offers good heat dissipation and robust resistance to mechanical vibration. A prototype of the SiP is fabricated and tested. The measurement results show a transmit power greater than 47.7 dBm, a receive noise figure below 3.5 dB, and a receive link gain exceeding 85 dB. This technology provides an effective technical solution for the integration of microwave front-end with high density and high reliability.

       

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