Abstract: In order to meet the need of miniaturization of microwave electronic systems, a miniaturized four-channel high-performance X-band silicon-based switching filter bank is introduced in this paper. According to the working principle and development requirements of the switching filter, the FET integrated switch is preferred, and the layout design of 4 groups of MEMS filters is realized by software simulation. The use of MEMS three-dimensional heterogeneous integration process technology, breaking through the traditional switching filter plane design method, the switch filter 4 groups of MEMS filters are placed in the upper and lower layers of stacked wafers, through the TSV hole in the multi-layer wafer to realize RF signal transmission and processing, make full use of the three-dimentional space of the product to realize the superposition design of double-layer MEMS filters greatly reduce the area of the switching filter, while the shielding cavity design of the filter, switch chips and the transmission line also greatly improve the isolation between channels, while the volume and weight are reduced to one hundredth of the traditional switching filter module.