基于GaN的可重构宽带Doherty功放设计

    Design of Reconfigurable Broadband Doherty Power Amplifier Based on GaN

    • 摘要: 传统Doherty功率放大器的带宽受限于λ/4传输线在不同频率处产生的相位偏移。本文设计了一种基于氮化镓的可重构宽带Doherty功率放大器(DPA),利用PIN开关实现峰值功率放大器支路的切换,相对减小了λ/4相位补偿线产生的相移范围,从而有效地提高了DPA的带宽。此外,在峰值功率放大器支路的输出匹配网络里还引入了谐波抑制网络来提高DPA的效率。为了验证设计有效性,使用氮化镓高电子迁移率晶体管CGH40010F设计并加工完成了一款宽带高效率DPA。测试结果表明,在2.8 GHz~3.6 GHz频段内,饱和输出功率为42 dBm~44.7 dBm,饱和漏极效率为59.4%~69%,功率回退6 dB时漏极效率在41.3%~48.8%。

       

      Abstract: The bandwidth of traditional Doherty amplifiers is limited by the phase shift of the λ/4 transmission line at different frequencies. In this paper, a reconfigurable wide-band Doherty power amplifier (DPA) based on gallium nitride is designed. PIN switch is used to switch the peak power amplifier branch, and the phase shift range generated by the λ/4 phase compensation line is relatively reduced, thus effectively improving the bandwidth of DPA. In addition, harmonic suppression network is introduced into the output matching network of the peak power amplifier branch to improve the efficiency of DPA. To verify the validity of the design, a wideband high-efficiency DPA is designed and fabricated using gallium nitride high electron mobility transistors CGH40010F. The test results show that in the band of 2.8 GHz~3.6 GHz, the saturation output power is 42 dBm ~44.7 dBm, the saturation drain efficiency is 59.4%~69%, and the drain efficiency is 41.3%~48.8% when the power is backtracked by 6 dB.

       

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