Abstract: Silicon(Si) PIN devices have high power resistance and high breakdown voltage. High-power radio frequency limiters based on Si PIN generally adopt a semi-active structure. Based on the design of the semi-active Si PIN limiter, a self-rectifying semi-active limiter in combination with the characteristics of gallium nitride(GaN) diodes is designed in this paper. Based on this, a heterogeneous integration solution is further adopted to combine Si PIN with GaN monolithic microwave integrated circuit solution to realize a heterogeneous integrated broadband miniaturized limiting circuit based on GaN diodes. The measured limiting circuit has an insertion loss of less than 2.4 dB in the frequency range of 2 GHz~14 GHz, a continuous wave power resistance of 100 W at 2 GHz, and a circuit size of 3.15 mm×3.00 mm×0.40 mm. Compared with the semi-active micro-assembled limiting architecture, the limiter designed in this paper is significantly reduced in size and can achieve a higher power resistance index.