一种基于宽带谐波整形的低相位噪声压控振荡器

    A Low-phase-noise Voltage-controlled Oscillator Based on Wideband Harmonic Shaping

    • 摘要: 文中设计了一种宽带低相位噪声压控振荡器(VCO)。该VCO采用了基于周期性时变电感的Class-D结构,并将共模谐振扩展技术应用于谐振腔,实现了宽带谐波整形,优化了整个带宽内的相位噪声性能。此外,将传统的N沟道金属氧化物半导体对替换为P沟道金属氧化物半导体交叉耦合对,降低了沟道电流的热噪声与闪烁噪声。该芯片采用SMIC 55-nm CMOS工艺制造,包括焊盘在内的芯片面积为0.47 mm2。测试结果表明,该VCO芯片在3.5 GHz~5.1 GHz(38.4%)的宽频率范围内能连续工作,输出功率为7.5 dBm~7.1 dBm,其在3.5 GHz处测试的相位噪声为-125.8 dBc/Hz @1 MHz。当电源电压为1.8 V时,该VCO核心消耗电流为21.3 mA~23.0 mA,缓冲级消耗电流为14.4 mA~15.3 mA,对应含调谐范围的优值(FoMT)为192.4 dBc/Hz~189.6 dBc/Hz。

       

      Abstract: A wideband voltage-controlled oscillator (VCO) with low phase noise is presented.A Class-D topology with a periodically time-varying inductor is adopted in this VCO, and the common-mode resonance extension technique is applied to the resonator. Wideband harmonic shaping is thus achieved, and the phase noise performance across the full operating bandwidth is optimized. Furthermore, the conventional N-channel metal-oxide-semiconductor pair is replaced with a P-channel metal-oxide-semiconductor cross-coupled pair to reduce the superior flicker noise and lower channel thermal noise. Fabricated in SMIC 55-nm CMOS technology, the chip occupies an area of 0.47 mm2, including pads. Measurement results demonstrate that the VCO achieves a continuous tuning range from 3.5 GHz to 5.1 GHz (38.4%). The output power ranges from 7.5 dBm to 7.1 dBm, and a phase noise of -125.8 dBc/Hz at a 1 MHz offset is measured at 3.5 GHz. Operating with a 1.8 V supply voltage, the VCO core consumes 21.3 mA to 23.0 mA, while the output buffer draws 14.4 mA to 15.3 mA. The corresponding figure of merit with tuning range (FoMT) is between 192.4 dBc/Hz and 189.6 dBc/Hz.

       

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