微波场效应管Ⅰ—Ⅴ特性模型研究

    A study of I - V Characteristic Modeling for Microwave FETs

    • 摘要: 本文对微波场效应管Ⅰ—Ⅴ特性模型进行了研究,分析比较了八种常用模型的优缺点,它可为微波电路的设计提供一个实用的参考依据.在模型参数提取中,我们采用了一种新算法,先应用一个基于主成份灵敏度分析的空间坐标变换,然后采用Levenberg-Marquardt算法进行优化拟合.实际计算表明,此法能够快速、精确地提取模型参数.

       

      Abstract: In this paper, a new algorithm is introduced to build microwave FET large signal model. Using a principal component sensitivity analysis procedure, this algorithm transforms the axes from model parameters to the uncorrelated principal component axes, then carries on I - V characteristic curve fitting by the L-M method. The results show that this algorithm is very fast and accurate. Using this algorithm, we develop a program for extracting model parameters. Eight large signal FET models have been considered and have been compared for four different cases. They can provide the microwave circuit designers with a practical benchmark.

       

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