Abstract: The feature of SiC WBG semiconductor is introduced.Compared with Si and GaAs semiconductor,it has remarkable advantages in breakdown electric-field intensity,cutoff frequency,heat conduction rate,anti-radiation,junction temperature and thermal stability,and so on.The prospect of SiC WBG power devices being used in radar transmitter is analyzed in this paper,especially SiC WBG power devices have excellent performance in output power,power density,operating frequency,operating bandwidth,environment adaptability and total efficiency,etc.The specification reqiured by modern radar on SiC power devices is analyzed in detail.