利用ADS 仿真设计射频宽带低噪声放大器

Design and Simulation of the RF Wide-Band Low Noise Amplifier Using ADS

摘要: 主要介绍了运用Agilent 公司的ADS 仿真软件进行宽带低噪声放大器的设计和仿真。选用FUJITSU 公司生产的砷化镓场效应管FHX13X，用ADS 软件进行设计、仿真和优化，实现了在2.5 GHz～3.5 GHz 较宽频带范围内，单级和两级宽带低噪声放大器的设计。

Abstract: Design and Simulation of the RF wide-band low noise amplifier Using ADS of the Agilent company is mainly presented. The design uses the chip of FUJISTU GaAs FET FHX13X and is simulated with Agilent ADS software. It realizes the design and simulation of one-stage and two-stage wide-band low noise amplifier in the range from 2.5GHz to 3.5GHz by using ADS.