Ku波段自偏置微带双Y结环行器的设计和制作

Design and Fabrication of Self-biased Microstrip Double-Y Junction Circulator

摘要: 目前商用环行器均需要外加偏置磁场，体积大，难集成。利用厚度为0.2mm的锶永磁铁氧体材料，基于带线结环行器理论，设计、优化并制作了一种自偏置微带双Y结环行器，器件无需外加偏置磁场，可显著降低环行器的体积和重量，便于集成化。测试结果和仿真结果基本吻合。测试结果表明，制作的器件在17.5GHz和29.3GHz频率点处均呈现明显的环行性能。在17.5GHz处，电压驻波比为1.3，插入损耗为4.2dB，隔离损耗为20.4dB。在29.3GHz附近，隔离损耗为18.1dB。在30.3GHz附近，插入损耗为3.1dB，电压驻波比约为1.2，最后探讨了所制作的环行器的插入损耗偏大的原因。

Abstract: pulsewidth and 10% duty cycle. The results tested show that within 30% relative bandwidth the pulse output power is greater than 65W and PAE is greater than 45%. So it is shown that compared with Si and GaAs power amplifiers, the GaN chip power amplifiers have more advantages in bandwidth and power density, and have good prospect in engineering application.