Abstract: The multi-bit cascaded broadband monolithic 3-dB hybrid reflection-type phase shifters fabricated on GaAs may exhibit excellent performances such as low absolute phase error and return loss, but it always occupy large die area and introduce high parasitical insertion loss;the high-pass/low-pass phase shifter demonstrates smaller die area, but with worse performance. Applying several GaAs pHEMT switches combination to change the electrical lengths of the phase controllable LC terminators which are connected to the coupled and direct ports,one coupler can achieve different phase shift over 6～18GHz. Two phase shifters only use two couplers, but the shifes cover full range of 0°～360°.The insertion loss and chip area are reduced.The measured results show they have similar performance to traditional topology and the total die area is reduced to 50%～60%.