W 波段单刀双掷开关的设计与仿真

Design and Simulation of W-Band SPDT Switch

摘要: 以AIGaAs 梁式引线PIN 二极管MA4AGBLP912 为基础，介绍了W 波段单刀双掷（SPDT）开关设计仿真过程，采用微带线分布参数设计，实现了单刀双掷开关的匹配网络。该设计中采用了二极管串并联型结构，获得了较好的电性能，结果表明在中心频率93GHz 附近，插入损耗IL＜0.5dB，关断状态下隔离度ISO＞45dB，在92GHz-94.5GHz 通带内驻波比VSWR≤1.5。

Abstract: Based on AIGaAs PIN Beamlead PIN Diode MA4AGBLP912 process, the design and simulation of W-band SPDT model were introduced. This SPDT employed serial-parallel diode circuit topology and microstrip line distribution parameters to achieve matching network of SPDT switch. As a result of simulation, low insertion less of 0.5dB, a hiGH isolation over 45dB and VSWR less of 0.5dB from 92GHz to 94.5GHz.