VHF/UHF频段宽带低温放大器设计技术

    Design Technology of Broadband Cryogenic Amplifier in VHF/UHF Band

    • 摘要: 通过分析HEMT 器件低温特性以及低温低噪声放大器的应用特点,重点阐述了器件选择、电路拓扑结构对电路稳定性的影响,以及稳定性设计对于电路匹配设计的重要性,并提出了VHF/UHF 频段宽带低温LNA的设计思路。以设计实例为基础,给出了改善电路稳定性、有利于驻波、噪声匹配的设计方法,低温LNA 的测试结果(相对带宽390%、噪声系数£0.3dB@77K、反射损耗£-18dB)和应用效果表明,文中的技术能够有效地指导设计与研制,具有较大的参考意义。

       

      Abstract: By analyzing the low temperature characteristics of HEMT devices and the application of cryogenic LNA,this paper presents the design of broadband LNA used for VHF/UHF band, from the perspectives of device selection and circuit stability influenced by circuit topology. This paper expounds the importance of stability considered in design process for circuit matching. From the concrete example, the design method of improving the stability of the circuit and the matching of standing wave and noise are given. The analysis of the test results ( relative bandwidth390%; noise figure£0.3dB@77K;return loss£-18dB) and application effects of cryogenic LNA proposes that the design technology involved in this paper can guide the design and development effectively, which is of great reference significance.

       

    /

    返回文章
    返回