一种基于SiGe工艺的多功能下变频芯片的设计与实现
Design of a Microminiature SiGe Down-Conversion Mixer Chip
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摘要: 随着射频收发组件小型化的要求越来越高,射频单片集成电路向小型化和多功能化方向发展。基于TSMC 0.35 mm SiGe 工艺成功研制了一款多功能下变频芯片。片上集成了正交(I/ Q)混频器、有源巴伦、多相滤波器、输出缓冲器和LDO。通过对整个电路合理的版图设计,实现了芯片的小型化,芯片裸片尺寸仅为2.2 mm′1.5 mm。测试结果表明,多功能下变频芯片射频和本振频率范围为900 ~1300 MHz,中频频率范围100 ~500 MHz,具有良好的正交宽中频输出特性,匹配良好;变频增益大于-1 dB,1 dB 压缩输入功率可达到8 dBm,线性度良好;本振输入功率0 dBm,整个电路功耗为0.45 W。Abstract: With the increasing demand of miniaturiazing the radio frequency transceiver receiver(T/R) modules, the radio frequency integrated circuit (RFICs) are moving towards the miniaturization and mutifunction. Based on the TSMC 0.35 mm SiGe process, a microminiature SiGe down-conversion mixer chip is developed successfully. The chip is integrated with the I/Q mixer, active balun, multiphase filter, output buffer circuit. In order to miniaturize the chip, the layout is optimized, the die size is 2.2 mm′1.5 mm. The measurement results show that the broadband frequency of I/Q IFs is 100~500 MHz,and the mixer has a good circuit matching; the gain is larger than -1 dB and the 1dB compressed input power is up to 8 dBm; so this is a high linearity wideband down-conversion mixer. LO power is 0 dBm, the power consumption of circuit is 0.45 W.