一种毫米波宽锁定范围的注入锁定倍频器设计
An Injection-Locked Frequency Tripler with a Wide Locking Range of Millimeter Waves
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摘要: 为提高毫米波段倍频器在低功耗下的工作带宽,采用IHP130 nm SiGe BiCMOS 工艺,设计了一种采用双端注入技术的毫米波宽锁定范围注入(DEI)锁定倍频器。该注入锁定倍频器主要由谐波发生器和带有尾电流源的振荡器构成,由巴伦产生差分信号双端注入振荡器的形式提高三次谐波注入强度,使其在E、W 等波段输出宽锁定范围和良好相位噪声性能的三倍频信号。仿真结果表明,注入锁定倍频器在工作电压为1.2 V,输入信号功率为0 dBm时,其锁定范围在57~105 GHz 内。在相同工作电压和输入信号功率下,输入频率为32 GHz 时,一次、二次和四次谐波抑制大于20 dBc,功耗为9.1 mW。Abstract: In order to improve the working bandwidth of the millimeter wave frequency tripler under low power consumption, IHP130 nm SiGe BiCMOS technology is used to propose a millimeter-wave wide lock range using double-ended injection (DEI) technology injection-locked frequency tripler. The DEI injection-locked frequency tripler consists of a harmonic generator and an oscillator with a tail current source, and the third-harmonic injection is improved in the form of a doubleended injection oscillator that generates a differential signal from the balun. The intensity results in a triple frequency signal with a locked range and a good phase noise performance in the E and W equal output ranges. According to the simulation results, when the operating voltage of the DEI injection locking frequency tripler is 1.2 V and the input signal power is 0 dBm, its locking range reaches 57-105 GHz. Under the same operating voltage and input signal power, when the input frequency is 32 GHz, the first, second and fourth harmonic suppression are all greater than 20 dBc, the power consumption is 9.1 mW.