InP 双异质结晶体管工艺ROM-Less 架构14 GHz DDS

    Direct Digital Synthesizer with ROM-Less Architecture at 14 GHz Clock in InP DHBT Technology

    • 摘要: 介绍了采用ft/fmax 为250/280 GHz 的0.7μm InP 双异质结晶体管工艺的14 GHz 8bit ROM-Less 直接数字频率合成器。电路采用正弦加权非线性数模转换器实现了一种ROM-Less 相幅转换,充分发挥了InP-DHBT 技术在中大规模混合信号集成电路中的速度优势。为降低功耗,采用了简化的流水线相位累加器。在整个频率控制字范围内,测试得到的平均无杂散动态范围为24.8 dBc。该电路由2122 个晶体管组成,功耗为2.4 W,其优值系数为5.83 GHz/ W。

       

      Abstract: The paper presents the work on a 14 GHz 8 bit ROM-Less direct digital synthesizer (DDS) in 0.7 μm InP double hetero-junction bipolar transistor (DHBT) technology having ft 250/ fmax 280 GHz. The sine-weighted nonlinear digital to analog converter (DAC) is adopted to achieve a phase-to-amplitude ROM-Less architecture, which can make the best of speed advantage of the InP DHBT technology for medium to large scale mixed signal integrated circuit. A simplified pipelined phase accumulator is used to reduce power consumption. Over the full range of frequency control words (FCWs), the average spurious free dynamic range (SFDR) is 24.8 dBc. The circuit is implemented with 2122 transistors consuming 2.4 W of power and has a figure of merit (FOM) of 5.83 GHz/ W.

       

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