Abstract: A wide band low-pass filter is designed using an integrated passive device (IPD) process on a gallium arsenide (GaAs) substrate to solve the problems such as the small size and the small rejection band range of conventional low-pass filters. The circuit structure is modeled and simulated in HFSS by introducing two transmission zeros on the Chebyshev-type low-pass filter circuit to improve the roll-off degree, and the structure is physically processed and tested. The test results show that the designed filter has a cutoff frequency of 11. 1GHz, its rejection band attenuation is greater than 30 dB within 15-30 GHz, and its overall size is only 800μm×650μm×111. 96μm.