一种用于氮化镓晶体管建模的TRL 校准方法

    A TRL Calibration Method for GaN Transistor Modeling

    • 摘要: 直通-反射-延迟线(TRL)校准相对于短路-开路-负载-直通(SOLT)校准是一种更加准确且易于实现的校准方法,尤其适用于二端口及多端口的非同轴测量。文中针对Wolfspeed 公司的氮化镓晶体管CGH40010F 的S 参数测量问题,分析讨论了TRL 校准在网络分析仪中的误差盒模型,在此基础上设计制作了一套TRL 校准件,其工作频率范围为1~6 GHz,在此频段内直通和延迟线均达到Sii(i =1,2)幅值小于-15 dB,Sij(i,j =1,2;i≠j)幅值大于-0. 8 dB;将该校准件特性指标内置到矢量网络分析仪中进行校准测试,实测结果表明,经过TRL 校准后的氮化镓晶体管小信号S参数与官方数据手册中一致,验证了该校准测量方法及据此设计制作的TRL 校准件是有效的。

       

      Abstract: Compared with Short-Open-Load-Thru (SOLT) calibration, Thru-Reflect-Line (TRL) calibration is a more accurate and easy-to-implement calibration method, especially suitable for non-coaxial measurements with more than two ports and multiple ports. In this paper, aiming at the S parameter measurement problem for Wolfspeed′ s GaN transistor CGH40010F, the error box model in a network analyzer for the TRL calibration kit is analyzed. On this basis, a set of TRL calibration kits is designed and manufactured. The operation frequency range is 1-6 GHz. The amplitude of Sii(i = 1,2) is less than -15 dB and the amplitude of Sij(i,j = 1,2;i≠j) is greater than -0. 8 dB for both of the thru and the delay-line standard components in this frequency band. The calibration parameters are set into the vector network analyzer for calibration test. The actual measurement results illustrate that the small signal S parameters of the GaN transistor after TRL calibration are consistent with the results in the official data manual, verifying the validity of the calibration measurement method and the TRL calibration parts designed and manufactured according to it.

       

    /

    返回文章
    返回