Abstract: Nowadays the dynamic power range of the receivers is broadening rapidly, the linearity of limiters encounters more and more challenge. Further requirements for the limiters include higher threshold and high power handling capability. GaN Schottky barrier diode is extremely suitable for high power rectifier circuit with low forward voltage and higher reverse breakdown voltage. To meet the demand of high linearity and high power tolerance, a high power limiter with high linearity based rectifier circuit by using a lateral GaN Schottky diode is introduced. Result shows that the insertion loss is less than 1 dB at 0.03-1 GHz and the VSWR is better than 1.6. The limiter can handle up to 100 W continuous power levels with a threshold greater than 17 dBm and a leakage no greater than 23 dBm. With small size and high power tolerance, the high power linear limiter can be widely used in high dynamic range receivers to improve the reliability without adding much nonlinearity.