F 类可重构功率放大器设计
Design of a Class F Reconfigurable Power Amplifier
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摘要: 针对F 类功放并根据可重构理论,文中设计了一种基于PIN 开关的新型谐波控制网络。该谐波控制网络主要通过调节PIN 开关工作状态来实现不同频率下多项谐波分量的控制,以此来提高功放的整体效率。基于此新型谐波控制网络,采用CREE 公司的CGH40010F GaN HEMT 晶体管设计了一款工作在1. 75 GHz 和2. 45 GHz的F 类可重构功率放大器,并进行了加工测试。实测结果表明,在1. 75 GHz 和2. 45 GHz 工作频率下,饱和输出功率大于40. 5 dBm,最大漏极效率大于69%,增益高于10. 3 dB,带宽大于200 MHz。Abstract: This paper analyzes the class F power amplifier and reconfigurable theory, and designs a new type of harmonic control network based on PIN switches. The harmonic control network mainly realizes the control of multiple harmonic components at different frequencies by adjusting the working state of the PIN switch, so as to improve the overall efficiency of the power amplifier. Based on this new harmonic control network, a class F reconfigurable power amplifier operating at 1. 75 GHz and 2. 45 GHz is designed using CREE′s CGH40010F GaN HEMT transistor, and is processed and tested. The actual measurement results show that under the operating frequencies of 1. 75 GHz and 2. 45 GHz, the saturated output power is more than 40. 5 dBm, the maximum drain efficiency is greater than 69%, the gain is better than 10. 3 dB, and the bandwidth is greater than 200 MHz.