射频微系统高功率发射调制干扰分析

    Analysis of High Power Emission Modulation Interference in RF Microsystem

    • 摘要: 随着GaN 技术深入推广以及三维堆叠技术的发展,微系统或组件正朝着轻薄化、高功率密度方向发展。收发切换和调制速度越快,雷达获得的传输波形越好、盲区越低,然而,发射调制速度快会在紧凑的空间中引入干扰。文中研究了射频微系统高功率发射调制脉冲前后沿过冲对收发组件信号的干扰,系统地分析了过冲对系统的干扰路径,并测试了十六通道收发微系统,有效降低干扰电平至1 V 以下。该分析对消除多路收发组件系统中的脉冲干扰有参考价值。

       

      Abstract: With the popularization and application of GaN technology and the development of three-dimensional stacking technology, microsystems or T/ R modules become lighter and thinner and have higher power density. The faster modulation speed will enable the radar to obtain better transmission waveform and lower blind area. However, faster transmission modulation is easy to introduce interference in a small space. Starting from the generation mechanism of voltage overshoot, this paper studies and analyzes the factors of voltage overshoot and the influence of voltage overshoot on the system. To improve the system reliability, the 16-channel transceiver micro-system is tested to effectively reduce the interference level to below 1 V. It is measured in the experiment that these methods can limit the voltage overshoot.

       

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