Abstract: High power microwave (HPM) technology has greatly developed nowadays. Electronic equipment has to face more and more threaten. GaN Schottky barrier diode is highly suitable for high power rectifier circuit with low forward voltage and higher reverse breakdown voltage. A HPM limiter based on rectifier circuit using a quasi-vertical GaN Schottky diode is introduced in this paper. Result shows that the insertion loss is less than 1 dB at 2-4 GHz and the VSWR is better than 1.5. The limiter can hand up to 1000 W incident power levels with 10 μs pulse width, 1% duty cycle. With low insertion loss and extremely high power tolerance, the HPM limiter can be widely used in receivers to improve the reliability.