高电容比射频/微波MEMS膜开关的理论分析和数值模拟

    Analysis and Numerical Simulations for High Capacitance Ratio of an RF/Microwave MEMS Membrane Switch

    • 摘要: 建立了一个MEMS膜开关电容比理论模型,由于这个模型比较全面地考虑了开关阈值电压、维持电压、偏置电压和介质膜内的电场强度等因素对电容比的影响,因而能较为正确地反映开关的电容特性。用数值方法计算了影响开关电容比的因素,并对计算结果进行了分析和讨论。提出了使用脉冲电压作为偏置电压可以使介质膜gj的厚度减少到50nm,从而使开关的电容比增加到3800。最后,讨论了实现高电容比MEMS膜开关的可行性。

       

      Abstract: A model of the capacitance ratio for a MEMS membrane switch is developed,which has considered the effect of threshold voltage,hold up voltage,bias voltage and the field strength in the dielectric layer on the capacitance ratio, thus it can effectively describe the characteristics of the capacitance for the switch. The capacitance ratio for a MEMS switch is numerically calculated,the results are analyzed and discussed. The method of using the pulse signal was proposed to decrease the thickness of the dielectric layer to about 50nm,and the capacitance ratio can be increased to 3800. Finally,the realization feasibility of the MEMS switch with high capacitance ratio is discussed.

       

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