Abstract:
This paper introduces the feature of SiC WBG semiconductor power device and application of GaN components on radar.Compared with Si power device,it has remarkable advantages in output power,power density,operating frequency,operating bandwidth,environment adaptability and anti—radiation and so on.. Design of DC bias, stability, harmonic impedance optimization, output power and corresponding efficiency on SiC RF Power MESFET CRF24010 is made.The result can be applicable in antenna of phased array radar.