基于SiC 三代半导体技术的T/R 组件功率放大电路设计

    Design of T/R Module Power Amplifier Based on SiC Wide Bandgap Semiconductor

    • 摘要: 本文介绍了SiC宽禁带功率器件的特性及其在相控阵雷达中的应用情况,与Si功率器件相比,该器件在输出功率、功率密度、工作频率、工作带宽、环境适应性、抗辐射能力等方面有卓越的性能。并以SiC RF Power MESFET CRF24010在T/R组件功率放大电路上的应用为实例,详细介绍了SiC宽禁带功率放大电路的设计过程,包括直流偏置设计、稳定性设计、谐波阻抗优化设计、输出功率与效率的仿真,并对实际电路进行测试。本文可以为有源相控阵天线的设计提供工程应用上的参考。

       

      Abstract: This paper introduces the feature of SiC WBG semiconductor power device and application of GaN components on radar.Compared with Si power device,it has remarkable advantages in output power,power density,operating frequency,operating bandwidth,environment adaptability and anti—radiation and so on.. Design of DC bias, stability, harmonic impedance optimization, output power and corresponding efficiency on SiC RF Power MESFET CRF24010 is made.The result can be applicable in antenna of phased array radar.

       

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