Abstract:
In this paper, the specification and performance of the LDMOS power device is presented. Compared with Si power device, it has remarkable advantages such as low-cost, high-gain, high linearity, better thermal stability and high reliability, etc. A 1000W LDMOS power amplifier was designed in P band. The saturated output power is 1000W with small size(55伊95 mm),light weights(120 g) and broadband from f0 to 1. 6f0 . The efficiency of amplifier was improved by drain modulation circuit. The characteristics of the amplifier are compact size, lightweight, broadband, high power and high power density.