Abstract: A new type of dual-frequency impedance converter structure is proposed in this paper. The impedance converter is T-type combined with II-type structure. Through theoretical derivation and simulation optimization, the impedance converter can achieve the transformation of any two different complex impedances to real impedances at any two frequencies. The dual-frequency bias circuit is used to achieve turbulence at two operating frequencies. Finally, a dual-band RF power amplifier can be applied to both TD-LTE and GSM networks. Compared with other multimode multiband power amplifiers, it is simple and easy to complete the theoretical derivation process of the dual-frequency impedance converter, and can achieve more than 68% power added efficiency, at the same time the design has high output gain and high flatness, the overall circuit structure is simple.