Abstract: The inductive adder pulse generator based on RF power MOSFET (metal oxide semiconductor field effect transistor) is proposed to realize high repetition frequency nanosecond pulse according to technical index and research status at home and abroad. There are the same fifteen cells utilized in the pulse generator, and each can output pulse with 670 V/50 A. Consequently the high voltage pulse with 10 kV/50 A is reached as the secondary windings of pulse transformers of all the cells stacked are connected in series. The leakage inductance of the transformer and the loop inductances of the generator and cells must be very small for fulfilling the rise time less than 5 ns. Both primary and secondary windings of the transformer with a coaxial configuration consist of a single turn, and the integral design of the pulse generator unit module and the transformer is carried out, which are adopted to reduce the leakage inductance of the transformer and the loop inductances of the cell. The high power drive circuit and a synchronous trigger with multiple outputs are used to switch on and off the MOSFET fast and simultaneously. The simulation results show that the design meets the requirements.