一种用于5G 终端的毫米波收发器前端芯片的研制

    Research and Development of a Millimeter Wave Transceiver Front End Chip for 5G Terminal Applications

    • 摘要: 用0.15 μm GaAs 增强型赝配高电子迁移率电子管(EPHEMT)工艺研制了一款集功率放大器、低噪声放大器、单刀双掷开关为一体的、可用于5G 宽带无线移动通信系统终端的毫米波收发器前端芯片。其中,功率放大器采用电抗匹配技术的两级放大拓扑结构,单刀双掷开关采用正电压控制的对称器件结构,低噪声放大器采用两级最佳噪声兼顾增益的拓扑结构。测试结果表明, 24.25 ~ 27.5 GHz频带内,芯片发射支路饱和输出功率>22 dBm,附加效率>28%;芯片接收支路噪声系数<3.0 dB, 线性增益>13 dB; 芯片收发隔离度优于-20 dB。该芯片面积为2.2 mm×1.8 mm。

       

      Abstract: A millimeter wave monolithic microwave integrated circuit (MMIC) which consisted of a power amplifier (PA), a low noise amplifier (LNA) and a single-pole double-throw (SPDT) switch has been successfully fabricated by using 0.15 μm GaAs EPHEMT technology. The chip can be applied to transceiver front end of a new generation (5G) broadband wireless mobile communication system terminal. The PA is designed using two-stage amplification topology with reactance matching technology. The SPDT switch is symmetrically composed of HEMTs at each way, and it's positive voltage controlled. The LNA is designed using two-stage amplification topology with optimal noise and gain. The test results of fabricated chip show that at 24.25~27.50 GHz,the transmitter of MMIC delivers a saturation output power of more than 22 dBm, the power added efficiency (PAE) is more than 28%, the receiver of MMIC gain demonstrats more than 13 dB, and a maximum noise figure is of 3.0 dB, the T/ R isolation of MMIC is better than -20 dB. The chip size is 2.2 mm×1.8 mm.

       

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