Abstract: This paper presents a temperature-controllable vanadium dioxide (VO2) radio frequency (RF) switch, the switching characteristics of its temperature control are verified on the coplanar waveguide transmission line. A 70 nm thick VO2 film is formed on the sapphire substrate by DC magnetron sputtering process, and it is cut into independently controllable VO2 units. The VO2 units are embedded in the coplanar waveguide transmission line, and the resistance of VO2 switch is controlled by changing the applied temperature to switch between high resistance state and low resistance state, so as to switch the state of the transmission line between “on”and “off”. The simulation design and experimental measurement of the device constructed by this VO2 RF switch are carried out, and the simulation and measurement results are in good agreement. Temperature-controllable VO2 switch has the characteristics of low-temperature cut-off RF signal and high-temperature conduction RF signal, which provides a new idea for the realization of adjustable microwave devices.