Design of a C-band GaN HEMT Internal Matching Power Amplifier

To address the critical demand for high power and high efficiency radio frequency power amplifiers in radar systems, an gallium nitride internally matching power amplifier operating in the C-band is designed. The input and output are matched using chip capacitors and bond wires machined on an Al₂O₃ ceramic substrate. The designed internal matching power amplifier operates with a drain voltage of 48 V and a gate voltage of -2 V, at 5.7 GHz~5.9 GHz, the maxium output power is 47.6 dBm, the PAE is greater than 40%, and the power gain is greater than 12.8 dB. It fully shows the characteristics of gallium nitride high electron mobility transistor devices with high withstand voltage and high output power.