Design of a Ku Band T/R Multi-function Chip Based on 0.15 μm GaAs PHEMT Process

Based on a 0.15 μm GaAs PHEMT process, this paper designs and implements a transceiver multifunction chip for Ku-band radio frequency front-ends. To achieve high-density integration, the design integrates core modules such as a single-pole double-throw (SPDT) switch, a power amplifier (PA), and a low-noise amplifier (LNA) onto a single chip, thereby obtaining the distinctive features of a compact structure and high integration level. Specifically, the SPDT switch at the transmit output port adopts a parallel-transistor structure to achieve low loss and to accomplish switching between the transmit and receive channels; the power amplifier in the transmit channel employs a two-stage dual-bias cascaded topology to improve efficiency; and to effectively reduce power consumption, the low-noise amplifier in the receive channel utilizes a three-stage current-reuse structure. Measured results show that within the 14 GHz~18 GHz frequency band, the transmit channel exhibits a gain of over 20 dB, a P1dB output power higher than 15.5 dBm, and input/output voltage standing wave ratios (VSWR) below 2; the receive channel achieves a gain greater than 27 dB, a noise figure lower than 1.9 dB, a P1dB output power above 5.2 dBm, and VSWR better than 1.6. These measured results show good agreement with the simulation curves, verifying the feasibility and effectiveness of the design scheme. With dimensions of 2.30 mm×1.70 mm×0.08 mm, the chip features a compact structure and can be widely used in future wireless communication systems.