Study of Enhancement-Mode GaAs MESFET for Ultra Low Power Consumption MMIC Applications

The model of enhancement-mode GaAs MESFET (EFET) for low consumption power and low noise application? has been obtained, using a small-signal equivalent circuit with its component values derived from the physical parameters and the bias conditions. The dependence of the RF performance and the DC power consumption on physical parameters of EFET is also studied. The Optimized range of physical parameters is given which is helpful for the design of active device in ultra low power consumption MMIC.