LI Yong, SU Dao-yi, CHEN Zhi-hui, FU De-rain, ZHANG Xiao-miao. FDTD Analysis on Microwave Active Circuits with Lumped Device Characterized by S-parameters[J]. Journal of Microwaves, 2009, 25(6): 49-54.
    Citation: LI Yong, SU Dao-yi, CHEN Zhi-hui, FU De-rain, ZHANG Xiao-miao. FDTD Analysis on Microwave Active Circuits with Lumped Device Characterized by S-parameters[J]. Journal of Microwaves, 2009, 25(6): 49-54.

    FDTD Analysis on Microwave Active Circuits with Lumped Device Characterized by S-parameters

    • Inverse Fourier transforms and complex convolution integral are adopted in traditional method to take S pa- rameters of active components into FDTD iteration steps. To avoid the complex convolution integral calculation, we firstly transform the measured S parameters into Y parameters, and then the Vector Fitting technique is used to obtain rational poly- nomial of Y parameters in s domain. Through difference technique or Z-transform method, the Y parameter is taken into FDTD iteration steps. To increase the computational efficiency and stability, FDTD is used to distill the time domain charac- ter model of distributing elements. An example of microwave FET amplifier circuit is analyzed, and validates the efficiency and precision of the method.
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