Design and Implementation of Monolithic Distributed Amplifier

Two millimeter wave monolithic distributed amplifiers are designed and implemented with 0.15μm GaAs pHEMT process.A RC network is used to replace the termination resistor in the traditional distributed amplifier structure to reduce DC power consumption,and a short stub at input port is used to improve ESD protection.In order to meet various requirements for gain and power,two different distributed amplifiers with the same number of transistor are designed.The distributed amplifier I achieves a gain of（9.4±1.1）dB and a maximum output 1dB compress point of 21.5dBm in the frequency range of 10~40GHz.The distributed amplifier II achieves a gain of（12.2±1.4）dB and a maximum output 1dB compress point of 17dBm in the frequency range of 15~40GHz.