Research and Development of a Millimeter Wave Transceiver Front End Chip for 5G Terminal Applications

A millimeter wave monolithic microwave integrated circuit (MMIC) which consisted of a power amplifier (PA), a low noise amplifier (LNA) and a single-pole double-throw (SPDT) switch has been successfully fabricated by using 0.15 μm GaAs EPHEMT technology. The chip can be applied to transceiver front end of a new generation (5G) broadband wireless mobile communication system terminal. The PA is designed using two-stage amplification topology with reactance matching technology. The SPDT switch is symmetrically composed of HEMTs at each way, and it's positive voltage controlled. The LNA is designed using two-stage amplification topology with optimal noise and gain. The test results of fabricated chip show that at 24.25~27.50 GHz,the transmitter of MMIC delivers a saturation output power of more than 22 dBm, the power added efficiency (PAE) is more than 28%, the receiver of MMIC gain demonstrats more than 13 dB, and a maximum noise figure is of 3.0 dB, the T/ R isolation of MMIC is better than -20 dB. The chip size is 2.2 mm×1.8 mm.